What Has Been the Progress and Growth of the Silicon Carbide (SiC) Diodes Market in Recent Years?
The silicon carbide (sic) diodes market has seen considerable growth due to a variety of factors.
• The silicon carbide (SiC) diodes market will grow from $1.9 billion in 2024 to $2.12 billion in 2025 at a CAGR of 11.3%.
The growth is attributed to increasing demand for energy-efficient solutions, growth in the renewable energy sector, industrial automation, development of smart grids, and miniaturization of electronic devices.
What Is The Expected Growth In The Silicon Carbide (SiC) Diodes Market Size Evolve over the Forecast Period?
The silicon carbide (sic) diodes market is expected to maintain its strong growth trajectory in upcoming years.
• The silicon carbide (SiC) diodes market is projected to grow to $3.2 billion by 2029, at a CAGR of 10.9%.
This growth is driven by the rise of electric vehicle production, continuous SiC manufacturing innovation, energy efficiency emphasis, opportunities in 5G technology, and the global shift to sustainable energy. Trends include integration with renewable energy, SiC manufacturing advancements, growth of smart grids and energy storage, greater SiC diode use in consumer electronics, and adoption of advanced driver assistance systems.
What Main Forces Are Fueling Expansion In The Silicon Carbide (SiC) Diodes Market?
The escalating consumer preference for electric vehicles (EVs) is projected to fuel the silicon carbide (SiC) diode market progression. Electric vehicles use electric power from rechargeable batteries or alternative energy storage devices, replacing the usual gas or diesel-powered internal combustion engines. The shift towards EVs is influenced by environmental consciousness, improved charging facilities, and government incentives. Silicon carbide (SiC) diodes enhance the efficiency of EVs by reducing switching losses, improving thermal conductivity, and facilitating fast switching capabilities, which in turn curtails the size and weight of power components. Consequently, this boosts the overall performance and energy efficiency of EV power systems. For example, the International Energy Agency, a France-based autonomous intergovernmental organization, reported in April 2023 that electric car sales surpassed 10 million in 2022 and are anticipated to reach nearly 14 million in 2023, and ambitious goals are pushing it up to 35% by 2030. Thus, the escalating demand for electric vehicles (EVs) is set to spur on the silicon carbide (SiC) diode market.
What Are The Primary Segments In The Global Silicon Carbide (SiC) Diodes Market?
The silicon carbide (SiC) diodes market covered in this report is segmented –
1) By Type: Schottky Diodes, Junction Diodes, P-Insulator-N Diodes (PIN Diodes), Other Types
2) By Forward Current: 2 To 5 Amperes, 6 To 10 Amperes, 11 To 20 Amperes, 21 To 40 Amperes, Above 40 Amperes
3) By Reverse Voltage: 650 Voltage, 1200 Voltage, 1700 Voltage, 3300 Voltage
4) By Application: Automotive, Medical Imaging, Communication, Data Centers, Defense, Photovoltaic Solutions, Other Applications
Subsegments:
1) By Schottky Diodes: Standard Schottky Diodes, Low-Forward Voltage Schottky Diodes, High-Temperature Schottky Diodes
2) By Junction Diodes: Standard Junction Diodes, High-Efficiency Junction Diodes, High-Voltage Junction Diodes
3) By P-Insulator-N Diodes (PIN Diodes): Power PIN Diodes, High-Speed PIN Diodes, Low-Power PIN Diodes
4) By Other Types: Varactor Diodes, Zener Diodes, Avalanche Diodes, MOS Diodes (Metal-Oxide-Semiconductor Diodes), Shockley Diodes
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How Are New Trends Impacting The Size Of The Silicon Carbide (SiC) Diodes Market?
Leading corporations in the silicon carbide (SiC) diode market are concentrating their efforts on creating improved products, such as third-generation silicon carbide Schottky barrier chips, to boost efficiency and performance in high-power applications. These chips make use of a Schottky barrier diode design that provides high breakdown voltage, low forward voltage drops, increased switching speeds, and exceptional thermal conductivity. Toshiba Electronic Devices & Storage Corporation, a company based in Japan, introduced the TRSxxx65H series in July 2023. This diode proves to be a remarkable improvement with a low forward voltage of 1.2V, which is 17% lesser than the earlier generation's 1.45V. Consequently, power conversion efficiency is significantly amplified. The series can withstand forward DC currents (IF(DC)) up to 12A and square-wave surge currents (IFSM) reaching 640A. The diodes come in both TO-220-2L and DFN8×8 packaging formats and employ an improved junction barrier Schottky (JBS) structure. This innovative design serves to reduce leakage current and power dissipation, thereby increasing efficiency in industrial applications.
Who Are the Key Players In The Silicon Carbide (SiC) Diodes Market?
Major companies operating in the silicon carbide (SiC) diodes market are:
• Mitsubishi Electric Corporation
• TOSHIBA CORPORATION
• Avnet Inc.
• STMicroelectronics
• Infineon Technologies AG
• Renesas Electronics Corporation
• ON Semiconductor
• Microchip Technology Inc.
• Qorvo Inc.
• ROHM CO. LTD.
• Vishay Intertechnology Inc.
• Littelfuse Inc.
• Nexperia
• Fuji Electric Co. Ltd.
• Diodes Incorporated
• Alpha and Omega Semiconductor
• WOLFSPEED INC.
• Semikron Danfoss
• IXYS Corporation
• Sanken Electric Co. Ltd.
• GeneSiC Semiconductor Inc
What Is The Most Dominant Region In The Silicon Carbide (SiC) Diodes Market?
North America was the largest region in the silicon carbide (SiC) diode market in 2024. Asia-Pacific is expected to be the fastest-growing region in the forecast period. The regions covered in the silicon carbide (SiC) diodes market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
